A New Lateral Insulated Gate Bipolar Transistor Structure with Improved Electrical Characteristics

摘要

This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latch-up characteristics for power IC applications. For this purpose, several LIGBTs have been fabricated, which allows the comparison of the electrical characteristics of the proposed structure with those of previously reported LIGBTs. The RESURFed devices show a 360 V breakdown voltage and structures with and without shorted anode have been considered. The proposed modified LIGBT does not exhibit latch-up and shows a good compromise between static and dynamic characteristics.