High frequency bipolar transistor on SIMOX

摘要

A high frequency, double polysilicon bipolar transistor technology on SIMOX is presented. The SOI substrate consists of a conventional SIMOX wafer upon which a twin epi-layer is grown. A high-frequency bipolar transistor technology is then transferred to this substrate. The initial experimental results are presented and show a high cut-off frequency of some 12.4 GHz. A comparison with identical devices fabricated on bulk substrates is also given and indicate that an increase of about 20% in fT can be expected.