2D Numerical Investigation of Gate Structure, Band Alignment and Delta-Doping Effects on the Transconductance and Cutoff Frequency of Submicron Si/SiGe FET's

摘要

The behavior of several innovative submicrometer Si/SiGe FET variants is characterized using 2D numerical simulation. The behavior that is investigated includes transconductance, cutoff frequency, subthreshold and breakdown characteristics. The benefits of graded Ge doping in the channel is clearly demonstrated. MOS gated devices are predicted to have transconductances and cutoff frequencies about 25% higher than Schottky gated devices.