Non-Destructive Characterisation of Device Processing of Silicon-on-Sapphire (SOS) Wafers

机译：蓝宝石硅（SOS）晶片的器件处理的非破坏性表征

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Spectrosopic ellipsometry has been used to obtain microstructural and layer thickness information from processed SOS wafers consisting of poly-Si/gate oxide/epi-Si/sapphire structures. Oxide thickness and interface roughness increased for 0.1 ÃÂÃÂ¿m SOS wafers. Poly-Si formed by annealing ÃÂÃÂ¿-Si deposited layers had the best dielectric function and similar structure and thicknesses were obtained on bulk and SOS wafers.

机译：光谱椭圆偏振法已被用于从由多晶硅/栅氧化层/表硅/蓝宝石结构组成的SOS晶片中获得微观结构和层厚信息。氧化膜厚度和界面粗糙度为0.1μmSOS晶圆增加。通过退火γ-Si沉积层形成的多晶硅具有最佳的介电功能，并且在块状和SOS晶片上获得了相似的结构和厚度。

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《Solid State Device Research Conference, 1988. ESSDERC '88》|1988年|c4-55-c4-58|共4页
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Pickering C.; Sharma S.; Collins S.; Morpeth A.G.; Terry G.R.; Hodge A.M.;
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Non-Destructive Characterisation of Device Processing of Silicon-on-Sapphire (SOS) Wafers

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