Integrated Si/CoSi2/Si-Heterotransistors at High Current Densities

摘要

We have fabricated integrated Si/CoSi2/Si-heterotransistors by MBE. The commonbase current gain of the devices is correlated to pinhole size and density. The electrical behaviour is investigated up to an emitter current density of 6000A/cm². A decrease of current gain at high current densities is observed for devices with higher pinhole density. For devices with lower pinhole density, space charge effects will lead to an increase of emitter-to-collector delay time at high current densities.