Doped polysilicon resistors, e.g. discrete and integrated circuit resistors, analog-digital or digital-analog converter resistor networks or high frequency filters, are trimmed in a series or cascade circuit by high density current passage

摘要

Trimming of a group of doped polysilicon resistors is achieved by current passage at high current density through a series or cascade circuit. A group of doped polysilicon resistors, having a dopant concentration (c) of -1*1020 atoms/cm3 and the same dimensions, is trimmed by passing a current of -1 * 106 A.cm2 density through a series or cascade circuit of the resistors.