An Exponentially Ramped Current Stress Method Providing a Wide Range of Dielectric Parameters

摘要

The use of an Exponentially Ramped Current Stress as an accelerated method for wafer-level tunnel oxide reliability evaluation has already been proposed, [1,2]. This paper illustrates the wide range of dielectric parameters which can be obtained from this measurement, including Charge to Breakdown, I-V and Fowler Nordheim Characteristics, Breakdown Field and Time Dependent Dielectric Breakdown.