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STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED DIELECTRIC LAYER ABOVE A STRESS-NEUTRAL DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE
STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED DIELECTRIC LAYER ABOVE A STRESS-NEUTRAL DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE
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机译:通过在半导体器件的应力-中性介电材料上设置应力介电层,在层间介电中进行应力传递
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摘要
By forming a stressed dielectric layer on different transistors and subsequently relaxing a portion thereof, the overall process efficiency in an approach for creating strain in channel regions of transistors by stressed overlayers may be enhanced while nevertheless transistor performance gain may be obtained for each type of transistor, since a highly stressed material positioned above the previously relaxed portion may also efficiently affect the underlying transistor.
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