IR-drop modelling for measurement circuit of MEMS-based micro sensors

摘要

With the decrease of device scale and the increase of signal frequency, IR-drop effect becomes a severe problem and influences the measurement circuit performance of MEMS-based micro sensors. IR-drop effect causes the voltage to drop and increases the disturbing noise so as to degrade the SNR and sensitivity of the micro sensor, especially for the capacitive micro sensor. In this paper, the influence of IR-drop effect is analyzed. A new RLC model of classical dual T diode measurement circuit will be presented to describe the wire's parasitism. Experiments based on the silicon capacitive sensor will be demonstrated to support the RLC model and the noise model.