首页> 外文会议>Pan Pacific Microelectronics Symposium >PAVING THE WAY TO 3D: FROM PASSIVE TO ACTIVE INTERPOSERS
【24h】

PAVING THE WAY TO 3D: FROM PASSIVE TO ACTIVE INTERPOSERS

机译:铺平到3D:从被动到积极的插入者

获取原文

摘要

Passive interposers have focused a lot of attention these last years for advanced packaging, especially in the field of FPGA. While the demand will be in the coming years more and more pronounced for high performance computing (HPC), passive interposers are already facing their own limits in terms of size (>25×25 mm~2) and integration (wrapage, interconnects pitch, thickness...) and performance (signal integrity). In this paper, we report what are the current technological developments regarding Through-Silicon-Vias (TSV), chip interconnects temporary bonding techniques and stress management and what would be their impact on the next generation of interposers. In a second step, we discuss the perspectives, advantages and challenges of moving towards active interposers (i.e. with embedded transistors) and their impact on HPC architecture roadmap.
机译:无源插入者对先进包装的最后几年来说,尤其是在FPGA领域的情况下重点关注。虽然需求将在未来几年内越来越明显高性能计算(HPC),但无源插入器已经面临着尺寸(> 25×25mm〜2)和集成(包装,互连间距,厚度......)和性能(信号完整性)。在本文中,我们报告了目前关于硅通孔(TSV)的技术发展,芯片互连临时粘接技术和压力管理以及它们对下一代中介体的影响是什么。在第二步中,我们讨论了向积极插入器(即嵌入式晶体管)移动的观点,优点和挑战及其对HPC架构路线图的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号