首页> 外文会议>Materials Research Society(MRS);Symposium on fundamental mechanisms of low-energy-beam-modified surface growth and processing >Quantitative rheed analysis of biaxially-textured polycrystalline MGO films on amorphous substrats grown by ion beam-assisted deposition
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Quantitative rheed analysis of biaxially-textured polycrystalline MGO films on amorphous substrats grown by ion beam-assisted deposition

机译:离子束辅助沉积在非晶基质上的双轴织构多晶MGO膜的定量流变分析

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We have developed a computer simulation based on analytic calculation of relfection high energy electron diffraction (RHEED) patterns in the kinematic approximation for mosaic poly crystalline films for given values of electron beam incidence angle, polycrystalline texture, in-plane orientation distribution, and grain size. Although (RHEED) is most appropriately modeled using dynamical scattering theory, the computational efficiency of the kinematic approximation has enabled the development of a model suitable for real time measurement of crystallograhpic texture and in-plane orientation distributions for biaxially-textured films grown by ion beam-assisted deposition (IBAD). Using the simulation, we can quantitatively determine how RHEED spot shapes and relative intensities depend on the crystallographic texture and in-plane orientation distribution of polycrystalline films. RHEED patterns taken at 25 keV with incidence angle in the range 1-5 degrees from 10 nm thick, nominally (100)-texture MgO films grown on amorphous Si_3N_4 by IBAD were analyzed by comparing experimental RHEED phi rocking curves with those predicted by the simulation. For some films, an additional 200 nm thermally-grown MgO homoepitaxial layer was grown on top of the IBAD MgO layer. The model enables a quantitative correlation between biaxial texture and RHEED measurements. RHEED results are compared to X-ray rocking curve film analysis.
机译:对于给定的电子束入射角,多晶织构,面内取向分布和晶粒度值,我们已经基于对马赛克多晶膜的运动学近似中的相关高能电子衍射(RHEED)图案的解析计算,开发了计算机模拟。 。尽管(RHEED)最适合使用动态散射理论建模,但运动学近似的计算效率已使开发适用于实时测量离子束生长的双轴织构薄膜的结晶织构和面内取向分布的模型成为可能辅助沉积(IBAD)。使用模拟,我们可以定量确定RHEED光斑的形状和相对强度如何取决于多晶膜的晶体织构和面内取向分布。通过将实验RHEED phi摇摆曲线与模拟预测的曲线进行比较,分析了IBAD在非晶Si_3N_4上生长的,在25 keV入射角在10 nm厚的1-5度范围内,名义上(100)纹理的MgO膜上拍摄的RHEED图案。 。对于某些薄膜,在IBAD MgO层的顶部生长了另外的200 nm热生长的MgO同质外延层。该模型可实现双轴纹理与RHEED测量之间的定量关联。将RHEED结果与X射线摇摆曲线薄膜分析进行比较。

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