Visible and infrared emission from GaN:Er thin films grown by sputtering

摘要

Erbium-doped films were grown on sapphire and silicon substrates by reactive sputtering, with different Er concentrations in the film. GaN films deposited at 800 K were determined to be polycrystalline by x-ray diffraction analysis, and retained their polycrystalline structure after annealing in nitrogen at 1250 K. The Er-doped films showed optical transmission beginning at about 360 nm, and the Er dose and film purity were determined with Rutherford backscattering spectroscopy. Photoluminescence and cathodoluminescence spectroscopy showed shrp emission lines corresponding to Er~(3+) intra 4f shell transitions over the range from 9-300K. At above-bandgap optical dn electron excitation, the ~4S_(3/2) and ~4F_(9/2) transition dominate, and are superposed on the "yellow band" emission. The infrared emissioon line at 1543 nm, corresponding to the Er ~4I_(13/2) to ~4I_(5/2) transition is also observed.