Characterization of Hot-Electron effects on flicker noise in III-V nitride based heterojunctions

摘要

We report experiments on bot-electron stressing in commercial III/V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distrotions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25