Effect of temperature on I-V characteristic of a-Si:H photodiode

摘要

Abstract: sing contact-type linear image sensor, 16 bit/mm high resolution Schottky a-Si:H photodiodes have been fabricated, and its temperature effect on I-V characteristics has been clarified. To achieve excellent small darkcurrent and improve I$-p$//I$-d$/ ratio, the a-Si:H photodiodes with the passivation layer being annealed at 200$DGR@C in air for 30 min is found essentially necessary. In the reverse bias mode, the darkcurrent increases with temperature and doubles for every 8.89$DGR@C rise, while the photocurrent exhibits little affect below 100$DGR@C. !8