首页> 外文会议>IEEE International Symposium on Electromagnetic Compatibility >A Discussion of the Susceptibility of a Brokaw Bandgap to EMI
【24h】

A Discussion of the Susceptibility of a Brokaw Bandgap to EMI

机译:讨论Brokaw Bandgap对EMI的易感性

获取原文

摘要

In this paper, the susceptibility of a Brokaw bandgap voltage reference towards Electromagnetic Interferences (EMI) superimposed to the power supply is investigated. The attention is focused on the bandgap cell itself, verifying that it is the main responsible for the device malfunction when radio frequency noises are injected in the chip through the supply rail. In particular, the rectification phenomena of bipolar transistors, used in the bandgap cell, are proved to cause the voltage reference performance degradation. Some possible hints to overcome this problem are also explored, suggesting design modifications, filtering solutions and layout changes.
机译:本文研究了叠加到电源的电磁干扰电压(EMI)的推翻带隙电压参考的敏感性。注意力集中在带隙单元格本身上,验证它是当通过电源轨道注入芯片中的射频噪声时对器件故障的主要负责。特别地,证明了在带隙单元中使用的双极晶体管的整流现象,以引起电压参考性能下降。还探讨了一些可能提示克服此问题,建议设计修改,过滤解决方案和布局变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号