Three Stage 6-18 GHz High Gain and High Power Amplifier based on GaN Technology

摘要

A monolithic three stage HPA has been developed for wide band applications. This MMIC is fabricated on UMS 0.25μm GaN technology based on SiC substrate. At 18GHz, the MMIC achieved in CW mode 10W of output power with 20dB linear gain and 20% power added efficiency. The HPA provided 6 to 10W output power over 6 to 18GHz with minimum small signal gain of 18dB. These obtained performances are very promising and very close to the simulations; this will allow a very short term further improvement. This demonstration is the first MMIC on the UMS 0.25μm GaN technology.