Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China;
Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China;
Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China,Department of electronic and computer engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;
Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China;
Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China,Department of electronic and computer engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;
Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China;
Department of electronic and computer engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;
Department of electronic and computer engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;
Institute of Photo-electronics, College of Infromation, Nankai University,Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-electronic Information Science and Technology,(Nankai University and Tianjin University), the Ministry of Education Tianjin 300071, China;
机译:具有双线束连续波激光横向结晶的高双轴取向多晶硅薄膜的高性能多晶硅薄膜晶体管
机译:纳米金属诱导的结晶对底栅多晶硅薄膜晶体管电学特性的影响
机译:金属诱导的多晶硅结晶和在玻璃基板上制造的薄膜晶体管的迁移率增强
机译:金属诱导结晶多Si薄膜和薄膜晶体管
机译:通过晶粒增强技术形成的多晶硅薄膜晶体管的建模:金属诱导的横向结晶。
机译:镍金属诱导的横向结晶结晶多晶硅膜的结构表征
机译:错误的:通过镍硅化镍种子诱导的横向结晶进展P沟道底栅聚-SI薄膜晶体管