Control of Silica Particle Deposition for Fabrication of Post CMP Cleaning Ability Evaluation Wafer

摘要

Chemical mechanical planarization (CMP) is one of the essential process to semiconductor chip manufacturing process. In the CMP process, the post CMP clenaing process for removing abrasive particles after the planarization process becomes more important. For the cleaning evaluation, wafer with the same contamination condition are requied. This study establishes a means for standard wafer that contaminated by nanoparticle to evaluate post CMP cleaning. It also propose a standard wafer manufacturing method for each cleaning conditions.