Polishing wafer of, e.g. semiconductor, involves polishing with abrasive based on diamond particles in suspension, where abrasive mixture used implements diamond particles and silica particles with controlled diamond/silica volume ratio

摘要

Polishing a wafer of material, comprises polishing with an abrasive based on diamond particles in suspension in a solution, where the abrasive mixture used implements diamond particles and silica particles with a diamond/silica volume ratio that is controlled to obtain desired roughness for the wafer.