Impact of gate length and schottky layer variation on device performance of double #x03B4;-doped InAlAs/InGaAs HEMT

摘要

In this paper we describes the impact of gate length and schottky layer variation of InP based double δ-doped InAlAs/InGaAs high electron mobility transistor (HEMT). We study the effect of gate length and schottky layer variation. To obtain the various effects we use Atlas and nextnano3 tools. We have performed the characterization studies on the various parameters like threshold voltage (Vth), cut-off frequency (fr) and transconductance (gm), electron density in the channel (ND).