Pinning of the Fermi level in A2B6 semiconductors

摘要

Abstract: The phenomenon of Fermi-level 'pinning' was investigated in A$+2$/B$+6$/ compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy E$-FS$/ $EQ 4, 9 eV is valid for A$+2$/B$+6$/ compounds as for A$+4$/and A$+3$/B$+5$/ semiconductors. On this basis the position of Fermi-level 'pinning' for A$+2$/B$+6$/ compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed. !33