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Slow Write Driver Faults in 65nm SRAM Technology: Analysis and March Test Solution

机译:65nm SRAM技术中的慢写驱动器故障:分析和三月测试解决方案

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This paper presents an analysis of the electrical origins of slow write driver faults (SWDFs) (van de Goor et al., 2004) that may affect SRAM write drivers in 65nm technology. This type of fault is the consequence of resistive-open defects in the control part of the write driver. It involves an erroneous write operation when the same write driver performs two successive write operations with opposite data values. In the first part of the paper, we present the SWDF electrical phenomena and their consequences on the SRAM functioning. Next, we show how SWDFs can be sensitized and observed and how a standard March test is able to detect this type of fault
机译:本文介绍了可能会影响65nm技术中SRAM写入驱动器的慢速写入驱动器故障(SWDF)的电气起因(van de Goor等,2004)。这种类型的故障是写驱动器控制部分中的电阻性开路缺陷的结果。当同一个写驱动程序执行两个连续的写操作且具有相反的数据值时,它将涉及错误的写操作。在本文的第一部分中,我们介绍了SWDF的电现象及其对SRAM功能的影响。接下来,我们展示如何敏化和观察SWDF,以及标准的March测试如何检测这种类型的故障。

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