Implementing sense amplifier for sensing local write driver with bootstrap write assist for SRAM arrays

摘要

A method and circuit for implementing sense amplifiers for sensing local write driver with bootstrap write assist for Static Random Access Memory (SRAM) arrays, and a design structure on which the subject circuit resides are provided. The circuit includes a sense amplifier used in both read and write operations with a write assist boost circuitry. The sense amplifier captures and amplifies write data at a selected SRAM cell column and drives the write data onto local bit lines. The write assist boost circuitry temporarily supplies an increased device voltage differential to the SRAM cell during write operations to significantly increase SRAM cell write ability.