A Comparative Analysis of SRAM Cells in 45nm, 65nm, 90nm Technology

摘要

Growth In The Semiconductor Industries Has Brought Greater Demand For Low Power Consumption Design For Integrated Circuits (IC). Static Random Access Memory (SRAM) Has Become One Of The Major Components Due To Their Large Storage Density And Low Power Consumption. This Paper Implements Different SRAM Topologies Such As 6T, 7T, 8T And 9T In Three Different Technologies And Its Main Objective Is To Evaluate Its Performance On The Basis Of Static Power Dissipation, Delay, Leakage Current And Static Noise Margin (SNM). This Would Help The Designers To Determine Which Topology To Use In Different Applications.