Static Noise Margin Analysis during Read Operation of 7T SRAM Cells in 45nm Technology for Increase Cell Stability

摘要

In this paper we introduce Noise (the Static Noise present in 7T SRAM cell) effect the stability of cell. Actually SNM is present in SRAM cell which is effect the stability in read operation of the 7T SRAM cells. SRAM cell stability analysis is a based on Static Noise Margin (SNM) investigation when in read mode, although many memory errors may occur during read operations. So that SNM varies with each cell operation, a thorough analysis of SNM in read mode is required. In this paper we investigate the SRAM cell SNM during read operations analyzing various alternatives to improve cell stability in this mode. The techniques studied are based on transistor width, and word- and bit-line voltage modulations. We show that it is possible to improve cell stability during read operations while reducing word line voltage.