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HIGH DENSITY 45NM SRAM USING SMALL-SIGNAL NON-STROBED REGENERATIVE SENSING
HIGH DENSITY 45NM SRAM USING SMALL-SIGNAL NON-STROBED REGENERATIVE SENSING
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机译:采用小信号无频闪再生感测的高密度45NM SRAM
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摘要
A memory device includes a plurality of cells comprising CMOS structures. A non-strobed regenerative sense-amplifier (NSR-SA) is coupled to the cells and employs offset compensation and avoids strobe timing uncertainty to increase read-access speeds.
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