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High density 45 nm SRAM using small-signal non-strobed regenerative sensing
High density 45 nm SRAM using small-signal non-strobed regenerative sensing
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机译:采用小信号无条纹再生感测的高密度45 nm SRAM
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摘要
A memory device includes a plurality of cells comprising CMOS structures. A non-strobed regenerative sense-amplifier (NSR-SA) is coupled to the cells and employs offset compensation and avoids strobe timing uncertainty to increase read-access speeds.
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