Low Temperature Deposition of Hydrogenated Nanocrystalline Cubic Silicon Carbide Thin Films by HWCVD and VHF-PECVD

摘要

Hydrogenated nanocrystalline cubic silicon carbide (nc-SiC:H) films were successfully deposited on glass substrates at low substrate temperatures below 300 degC by hot wire chemical vapor deposition (HWCVD) and very high frequency plasma chemical vapor deposition (VHF-PECVD). We investigated structural properties of the films by spectroscopic ellipsometry and TEM observations. Photo-sensitivity of the films deposited by VHF-PECVD was higher than that of the films deposited by HWCVD. The secondary ion mass spectroscopy measurement revealed that the low photo-sensitivity of the films deposited by HWCVD was due to the metal contamination from the hot wires