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Improvement of film uniformity stability of PECVD silicon nitride deposition process by addition of fluorine removal to the plasma clean sequence

机译：通过在等离子体清洗序列中添加除氟来提高PECVD氮化硅沉积工艺的膜均匀性稳定性

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《》|2005年|P.143-148|共6页
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Zhao; A.; Bulger; J.M.; Green; L.P.; Harris; W.C.; Hunt; T.J.; Marchesseault; W.R.; Shuman; R.F.; French; M.C.; Lisy; H.C.;
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1. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [J] . Mateusz #x00152, mietana, Norbert Kwietniewski, Materials . 2014,第2期

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
2. Mechanical property characterization of sputtered and plasma enhanced chemical deposition (PECVD) silicon nitride films after rapid thermal annealing [J] . Wu P.-H., Lin I.-K., Yan H.-Y., Sensors and Actuators, A. Physical . 2011,第1期

机译：快速热退火后溅射和等离子体增强化学沉积（PECVD）氮化硅膜的机械性能表征
3. Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O-2/Ar chemistry [J] . Oh CH., Lee NE., Kim JH., Surface & Coatings Technology . 2003,第1a3期

机译：使用C4F8 / O-2 / Ar化学方法对氮化硅PECVD腔室进行远程等离子体清洗过程中，含氮添加剂气体对整体变暖气体排放的影响
4. Improvement of Film Uniformity Stability of PECVD Silicon Nitride Deposition Process by Addition of Fluorine Removal to the Plasma Clean Sequence [C] . Ailian Zhao, Joseph M. Bulger, Leslie P. Green, Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop . 2005

机译：通过加入氟去除磷含量序列的磷均匀性稳定性的提高
5. A study of PECVD silicon oxygen(x) fluorine(y) films as ILD and stability of interaction with metals. [D] . Kim, Sarah Eunkyung. 1998

机译：PELD硅氧（x）氟（y）薄膜作为ILD的研究以及与金属相互作用的稳定性。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Śmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频增强等离子体化学气相沉积（RF pECVD）反应器中样品高度对氮化硅薄膜光学性质和沉积速率的影响

Improvement of film uniformity stability of PECVD silicon nitride deposition process by addition of fluorine removal to the plasma clean sequence

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