Novel ion implantation method for extending source life with solid source of indium and antimony

摘要

InCl/sub 3/ and Sb/sub 2/O/sub 3/ that contain a dopant having a large stopping power than conventional ions are indispensable ion source materials for the fabrication of future high-end ultra large scale integrated circuits (VLSI). However, these materials cause the decline of ion source life due to source filament sputtering during implantation process and it impacts to tool availability and production turn around time (TAT). We found it originates from higher arc current than that of other ion sources, and suggest the new ion implantation control method that extends the ion source life without reducing processing throughput by increasing source gas flux, instead of lowering arc current. As a result of this application, we have achieved the extension of ion source life more than triple.