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Implantation profile and linear absorption coefficients for positrons injected in solids from radioactive sources Na-22 and Ge-68Ga-68

机译:放射性源Na-22和Ge-68Ga-68注入固体中的正电子的注入分布和线性吸收系数

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We present measurements of the penetration depths of positrons from Na-22 and Ge-68Ga-68 sources into thick targets. These measurements were made using a new apparatus with an HpGe detector. These new measurements allow one to determine the mass absorption coefficients for dozens of materials. As expected their values were Z-dependent. Additionally for Z > 32 some oscillatory dependence was observed. Using these measurements we propose an improvement to the well known results of Gleasen et al. [G.I. Gleason, I.D. Taylor, D.L. Tabern, Nucleonics 8 (1951) 12] for the formula giving the value of the mass absorption coefficient. We carried out Monte Carlo simulations for the implantation profile, which indicated that only in some intermediate region does one expect the standard exponential behavior. In the near and far regions the simulations indicate behavior different from the intermediate region. Based on the experimental studies and the Monte Carlo simulations a new formula for the implantation profile is proposed. (c) 2006 Elsevier B.V. All rights reserved.
机译:我们提出了从Na-22和Ge-68Ga-68来源进入厚靶的正电子穿透深度的测量。这些测量是使用带有HpGe检测器的新设备进行的。这些新的测量值可以确定数十种材料的质量吸收系数。不出所料,它们的值取决于Z。此外,对于Z> 32,观察到一些振荡依赖性。使用这些测量,我们提出了对Gleasen等人的著名结果的改进。 [G.I.格里森(美国)泰勒(Taylor) Tabern,Nucleonics 8(1951)12]中的公式给出了质量吸收系数的值。我们对植入曲线进行了蒙特卡洛模拟,这表明只有在某些中间区域,才期望标准指数行为。在近端和远端区域,模拟表明行为不同于中间区域。在实验研究和蒙特卡洛模拟的基础上,提出了一种新的注入轮廓公式。 (c)2006 Elsevier B.V.保留所有权利。

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