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Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer

机译:集成在MOEMS结构中的可调谐近红外InP / InGaAs QWs基光电探测器,用于实现微光谱仪

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This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 驴m) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable air-gap cavity resonator. We present first the design and process critical issues related to the residual strain management in the structure. The InGaAs QW growth aspects are presented. We also describe an example of a system for the monitoring of the sugar concentration in water which has been chosen to validate the concept.
机译:本文探讨了用于无创检测的近红外(NIR)显微光谱仪(1.5至2驴米)的设计和实现。该器件基于集成在MOEMS结构中以实现波长可调性的InGaAs应变QWs光电二极管。我们解决了两个主要挑战,即长波长光电探测器的实现与微机械可调气隙腔谐振器的制造相结合。我们首先介绍与结构中残余应变管理有关的设计和过程关键问题。介绍了InGaAs QW增长方面。我们还描述了一个用于监测水中糖浓度的系统示例,该系统已被选中以验证该概念。

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