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Analysis of substrate noise propagation in a lightly doped substrate mixed-signal ICs

机译:分析轻掺杂衬底中的衬底噪声传播混合信号IC

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Analysis and simulation results of substrate noise in mixed-signal ICs on lightly doped substrates are difficult to bring in agreement with measurements, even for very simple structures. In this paper, substrate noise propagation in lightly doped p-type substrates is studied with a simple test structure. Our study reveals that the current flow is multi-dimensional, and that adjacent layout details (such as nwells and metal wires) influence the propagation between two contacts. The analysis has enabled its to match the measured S/sub 21/ propagation with a simulation model from DC (error>8%) up to 10 GHz with an overall error smaller than 3 dB. Insight in simple structures such as the one considered here, is valuable in improving the understanding of substrate noise in lightly doped substrates.
机译:即使对于非常简单的结构,轻掺杂衬底上的混合信号IC中衬底噪声的分析和仿真结果也难以与测量结果保持一致。在本文中,通过简单的测试结构研究了轻掺杂p型衬底中衬底噪声的传播。我们的研究表明,电流是多维的,相邻的布局细节(例如nwell和金属线)会影响两个触点之间的传播。通过分析,它可以将模拟的S / sub 21 /传播与DC(误差> 8%)高达10 GHz的仿真模型进行匹配,总误差小于3 dB。对简单结构(例如此处考虑的结构)的洞察力,对于增进对轻掺杂衬底中衬底噪声的理解非常有价值。

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