Substrate Coupling of RF CMOS on Lightly Doped Substrate for Nanoscale Mixed-Signal Design

摘要

In this paper, the statistical behavior of the substrate noise for the RF CMOS for the System-on-Chip application is analyzed using simple analytical model. This behavior is related to the digital circuit section of the System-on-Chip while the package and board parasitic is not considered. To extend the capability of the standard CMOS, in terms of integration of high performance radio frequency substrate of light doping (high resistivity) is used. For the SoC application, the impact of resistivity of the substrate on the component of radio frequency CMOS is discussed. The result of this work is validated by comparing with the exiting results.