A novel Si/sub 1-x/Ge/sub x//Si hetero-junction power diode for the fast-switching and the soft recovery

摘要

A novel p/sup +/(Si/sub 1-x/Ge/sub x/)-n/sup -/-n/sup +/ hetero-junction power diode which has the gradual changing doping concentration in the n/sup -/-region is proposed. The device characteristics were simulated and the optimal design was given. From the result, it can be shown that the fast-switching and the soft recovery characteristics of the device are much improved but not notable changed in forward drop. The optimal design of the Ge percentage and the trade-off of the n/sup -/-region thickness for the fast-switching and the soft recovery are given.