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Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method
Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method
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机译:具有软恢复的高速功率二极管的制造方法以及使用该方法制造的功率二极管
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摘要
In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate (10) is governed by first, unmasked bombardment (14) with an axial profile and by subsequent, second, masked bombardment (15) with a lateral profile, improved reverse characteristics are achieved in that the first, unmasked bombardment is ion bombardment (14) which governs the switching response of the power diode and in that the second, masked bombardment is electron bombardment (15), which reduces the active area of the power diode. In a power diode equipped with such a semiconductor substrate (10), the thermal resistance Rth is reduced in relation to the active area of the power diode.
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