Planar and 3D Si passive inductive structures are presented, with respect to their application in RF ICs. The modeling of the structures is realized by the use of a custom CAD tool, SISP. It Is shown how, for the first time, fast answers to complex questions can be obtained before fabrication, such as: inductance boost of up to 600% in three-layer spiral inductors compared to planar ones, with no cost in quality factor; optimization of the insertion and return losses of integrated transformers under area reduction schemes; modeling of practical integrated baluns; effect of physical separation on the crosstalk between inductors. The accuracy of modeling results is established through measurements in an array of fabricated structures.
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