Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures

摘要

GaAs/GaAs/sub 1-x/P/sub x/ multiple quantum wells structures have been studied by modulation spectroscopy technique. From a detailed lineshape fit to the contactless electroreflectance and piezoreflectance data we have determined the unstrained conduction band offset parameter for x=0.29.