Ultra thin (>3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

摘要

In this paper, ultra thin (>3 nm) Si/sub 3/N/sub 4//SiO/sub 2/ stack layer with significant lower leakage current, superior boron diffusion barrier properties, and reliability compared with SiO/sub 2/ of identical thickness have been fabricated by in-situ RTP processing. These results demonstrate for the first time that ultra thin LPCVD Si/sub 3/N/sub 4/ can be used as gate dielectrics, contrary to those conclusions made previously on thicker LPCVD Si/sub 3/N/sub 4/.