Modeling nonparabolicity effects in silicon inversion layers

摘要

We present a method to include the nonparabolicity correction for the bulk dispersion relation in the self-consistent solution of Schrodinger and Poisson equation. A formalism has been derived which allows us to characterize each subband by its energy, an effective mass and a subband nonparabolicity coefficient. A one-dimensional Schrodinger-Poisson solver has been developed which is applicable to both MOS and heterostructures. The program is applied to silicon inversion layers, and the influence of nonparabolicity on the subband system is quantitatively analyzed. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum of the carriers.