A Unified Model for the 1/f Noise Induced by Threading Dislocation in Strained-Si pMOSFETs

摘要

A unified accurate 1/f noise model is developed for the strained-Si pMOSFETs with threading dislocations. With the fluctuations of carrier number and mobility taken into account simultaneously, the deep-submicrometre devices are investigated. The numerical results display that the area of the gate is key factor for the device's noise characteristics and that a critical gate area can be defined to evaluate the effects of the threading dislocations. And the 1/f noise induced by threading dislocation shows different characteristics at three conditions respectively. The unified model is also clearly reveal the physical mechanism of 1/f noise generated from threadingdislocation definitely and available for deep-submicrometre device simulation, design and reliability applications.