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Reliability of Nano-Structured Nickel Interconnections Replacing FlipChip Solder Assembly without Underfill

机译:纳米结构镍互连的可靠性,可替代无底部填充的倒装芯片焊接组件

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This paper reports the reliability of fine pitch interconnections using nano-structured nickel as the primary interconnection material. Assembly was accomplished with different bonding methods to provide organic compatible low-temperature fabrication. Au-Sn and Sn-Cu were used for solder-based assembly of nanonickel interconnections. Low modulus conductive adhesives impart lower stresses in the interconnections and enhance reliability though they add electrical parasitics. These were used as an alternate bonding route and compared to solders. Test vehicles were fabricated at 200 micron pitch to evaluate the reliability with different bonding routes. Different CTE substrates - FR4 with 18 ppm/C, advanced organic boards with 10 ppm/C, novel low CTE (3 ppm/C) substrates based on Carbon-Silicon Carbide (C-SiC) were evaluated. No underfilling was used in all the test vehicles evaluated in this study. High frequency electrical characterization was performed to compare the electrical parasitics from different bonding routes. Nanometal bumps bonded with conductive adhesives showed the highest reliability withstanding 1500 cycles. This technology can be easily downscaled to submicron and nanoscale unlike the current solder technologies leading to true nanointerconnections.
机译:本文报道了使用纳米结构镍作为主要互连材料的细间距互连的可靠性。组装是通过不同的键合方法完成的,以提供有机兼容的低温制造方法。 Au-Sn和Sn-Cu用于纳米镍互连的基于焊料的组装。低模量导电粘合剂虽然会增加电气寄生效应,但会给互连带来较低的应力并提高可靠性。这些被用作替代的焊接方法,并与焊料进行了比较。以200微米的节距制造测试车辆,以评估不同粘合路径下的可靠性。评估了不同的CTE基板-含18 ppm / C的FR4,具有10 ppm / C的高级有机板,基于碳化硅碳化物(C-SiC)的新型低CTE(3 ppm / C)基板。在这项研究中评估的所有测试车辆中均未使用底部填充胶。进行了高频电特性分析,以比较来自不同键合路径的电寄生效应。用导电粘合剂粘合的纳米金属凸点在经受1500次循环后显示出最高的可靠性。与导致真正的纳米互连的当前焊接技术不同,该技术可以轻松地缩小至亚微米和纳米级。

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