Electrical Characterization of Silicon Layers Grown by Convection-Assisted Chemical Vapour Deposition (CoCVD)

摘要

In this work, we present the electrical properties of thin epitaxial silicon layers grown by convection-assisted chemical vapour deposition (CoCVD). Mono-crystalline (100)-orientated Fz silicon wafers were used as test substrates. The thin layers were investigated by four-point-probing and Hall-measurement. Structural information was obtained by chemical etching with a Secco etchant. First solar cells with efficiencies of 11% were manufactured on 8.5mum-thick Si film and characterized