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Low Temperature Microcrystalline Silicon Solar Cells Prepared by Hot-Wire Chemical Vapor Deposition

机译:热线化学气相沉积制备的低温微晶硅太阳能电池

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Intrinsic hydrogenated microcrystalline silicon (muc-Si:H) films were prepared by hot-wire chemical vapor deposition (HWCVD) using a graphite filament at a substrate temperature of 210degC. Films were characterized by Raman Spectroscopy, FTIR and electrical conductivity measurements with varying silane concentrations on glass substrates. Solar cells were fabricated in a glass/SnO2/pin/Al structure and device efficiency was measured to be 2.8%
机译:通过使用石墨丝在210摄氏度的衬底温度下进行热线化学气相沉积(HWCVD)来制备本征氢化微晶硅(muc-Si:H)膜。通过拉曼光谱,FTIR和电导率测量对薄膜进行表征,并在玻璃基板上使用不同的硅烷浓度。太阳能电池以玻璃/ SnO 2 / pin / Al结构制造,测得器件效率为2.8%

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