Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer

摘要

An irregular non-planar transition effect, that connects a 50/spl Omega/ microstrip to a 16/spl Omega/ partially shielded valley microstrip is studied. The transition effect is modeled using LC T-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz.