A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

摘要

This work presents a lateral RF BJT built on SOI-CMOS compatible substrate. The primary motivation is to realize a SOI-BiCMOS technology suitable for low power RF and mixed-signal SoC. This novel LBJT structure relies on a self-aligned polysilicon side-wall-spacer (PSWS) to connect the base contact to the intrinsic base with dimensions in 100 nm range. The fabricated LBJTs exhibit superior Johnson's product (f/sub /spl tau///spl times/BV/sub CEO/) in the range between 190-300 GHz/spl middot/V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15 mA//spl mu/m/sup 2/. Both figure-of-merits are in-line with advanced SiGe-HBT devices, and superior than previously published data on lateral BJTs.