Are we there yet? - a metamorphic HEMT and HBT perspective

机译：我们到了吗？ -变质的HEMT和HBT观点

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Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper presents the recent development of metamorphic HEMTs and HBTs and discusses their readiness for commercialization.

机译：变质外延技术提供了将GaAs衬底的低成本和可制造性优势与基于InP的器件的高性能相结合的可能性。本文介绍了变质HEMT和HBT的最新发展，并讨论了它们准备商业化的可能性。

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《》|2005年|P.13-19|共7页
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Geok Ing Ng; Radhakrishnan; K.; Hong Wang;
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中图分类工业技术;
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III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; GaAs; HBT perspective; InP; metamorphic HEMT; metamorphic epitaxy technique;

机译：III-V半导体;砷化镓;异质结双极晶体管;高电子迁移率晶体管;铟化合物; GaAs; HBT透视; InP;变质HEMT;变质外延技术;

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专利

1. Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD [J] . Zhou W., Tang C. W., Zhu J., IEEE Electron Device Letters . 2007,第7期

机译：通过MOCVD在GaAs衬底上变质异质结构InP / GaAsSb / InP HBT
2. Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs [J] . J. Gao, X. Li, H. Wang, IEE Proceedings. Part H, Microwaves, Antennas and Propagation . 2005,第3期

机译：变质InP / InGaAs HBT等效电路模型的外在电阻确定方法
3. Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs [J] . J. Gao, X. Li, H. Wang, IEE Proceedings. Part H, Microwaves, Antennas and Propagation . 2005,第3期

机译：变质InP / InGaAs HBT等效电路模型的外在电阻确定方法
4. Are we there yet? - a metamorphic HEMT and HBT perspective [C] . Geok Ing Ng, Radhakrishnan K., Hong Wang European Gallium Arsenide and Other Semiconductor Application Symposium . 2005

机译：我们到了吗？ - 一个变质的HEMT和HBT角度
5. MMIC power amplifiers in gallium nitride HEMT and indium phosphide HBT technologies. [D] . Paidi, Vamsi K. 2004

机译：氮化镓HEMT和磷化铟HBT技术中的MMIC功率放大器。
6. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs [O] . Ali Alaeddine, Cécile Genevois, Laurence Chevalier, 2011

机译：SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
7. Are We There Yet ? – A Metamorphic HEMTudand HBT Perspective [O] . Ing Ng Geok, Radhakrishnan K., Wang Hong 2005

机译：我们到了吗？ –变形HEMT ud和HBT观点
8. Metamorphic HBT's: InP/InGaAs/InP Devices Grown on GaAs Substrates. [R] . Rodwell, M. 2002

机译：变质HBT：在Gaas衬底上生长的Inp / InGaas / Inp器件。

Are we there yet? - a metamorphic HEMT and HBT perspective

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