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In-plane ordering of self-assembled InAs quantum dots on GaAsSb/GaAs(001) layers by molecular beam epitaxy

机译：GaAsSb / GaAs（001）层上自组装InAs量子点的分子束外延面内排序

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In this paper, we present the relationship between the growth conditions and the in-plane ordering of the InAs QDs on the GaAs/GaAsSb/GaAs(001) layers and discuss about the growth mechanism.

机译：在本文中，我们介绍了生长条件与GaAs / GaAsSb / GaAs（001）层上InAs QD的面内排列之间的关系，并讨论了其生长机理。

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《》|2005年|P.246-247|共2页
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Kanto; T.; Yamaguchi; K.;
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中图分类工业技术;
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III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; self-assembly; semiconductor growth; semiconductor quantum dots; GaAsSb-GaAs; InAs; InAs QD; growth conditions; growth mechanism; in-plane ordering; molecular;

机译：III-V型半导体;砷化合物;砷化镓;铟化合物;分子束外延生长;自组装;半导体生长;半导体量子点; GaAsSb-GaAs; InAs; InAs QD;生长条件;生长机理;面内有序;分子;

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专利

1. In-plane self-arrangement of high-density InAs quantum dots on GaAsSb/GaAs(001) by molecular beam epitaxy [J] . Toru Kanto, Koichi Yamaguchi Journal of Applied Physics . 2007,第9Pt1期

机译：GaAsSb / GaAs（001）上高密度InAs量子点的分子束外延面内自排列
2. Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition [J] . Tomoya Takahashi, Takuya Mukai, Ken Morita, Japanese journal of applied physics . 2009,第4issue2期

机译：在慢速生长条件下分子束外延在（001）和（113）B GaAs衬底上生长的自组装InAs量子点的光致发光特性
3. The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy [J] . Balzarotti A Nanotechnology . 2008,第50期

机译：生长中断分子束外延生长自组装InAs / GaAs（001）量子点的演变
4. In-plane ordering of self-assembled InAs quantum dots on GaAsSb/GaAs(001) layers by molecular beam epitaxy [C] . Kanto T., Yamaguchi K. International Microprocesses and Nanotechnology Conference . 2005

机译：通过分子束外延在Gaassb / GaAs（001）层上自组装INA量子点的平面顺序
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation [O] . SF Yoon, CY Liu, ZZ Sun, 2006

机译：自组装GaInNAs / GaAsN量子点激光器：固体源分子束外延生长和高温操作
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延

In-plane ordering of self-assembled InAs quantum dots on GaAsSb/GaAs(001) layers by molecular beam epitaxy

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