DC and high frequency performance of 0.1 /spl mu/m n-type Si/Si/sub 0.6/Ge/sub 0.4/ MODFET with f/sub MAX/=188 GHz at 300 K and f/sub MAX/=230 GHz at 50 K

摘要

Maximum oscillation frequency f/sub MAX/ as high as 188 GHz at 300 K and 227 GHz at 50 K are reported for a 0.1/spl times/30 /spl mu/m/sup 2/ n-type strained Si/Si/sub 0.6/Ge/sub 0.4/ modulation doped field-effect transistor (n-MODFET) together with high quality DC characteristics. These f/sub MAX/ are the highest values reported so far for Si-based hetero-FETs. The frequency performances are discussed using analytical expressions of f/sub MAX/ and f/sub Ti/ (intrinsic current gain cutoff frequency) together with the main equivalent circuit elements extracted.