Improvement of pattern shrinkage and roughness of photocurable polymer during dry etch process in photo-nanoimprint lithography

摘要

In this paper, photo-nanoimprint lithography is being focussed owing to working conditions at room temperature and low pressure. In this imprint lithography photocurable polymer is used as a top resist material. After imprinting process, it is observed that photocurable polymer remained between patterns on the substrate. This remained polymer should be removed, so that dry etch process was introduced. The increase in surface roughness and line edge roughness were found.